Strained-Si on Si Ge MOSFET Mobility Model
نویسندگان
چکیده
A new electron mobility model for strained-Si MOSFETs has been developed. The mobility increase produced by the strain in the silicon layer is accurately studied and described by means of simple analytical expressions. This model can be easily included in conventional device and circuit simulators. The need of a surface-roughness model dependent on the germanium mole fraction is highlighted. The model fits well experimental measurements.
منابع مشابه
MOSFET Channel Engineering using Strained Si, SiGe, and Ge Channels
Biaxial tensile strained Si grown on SiGe virtual substrates will be incorporated into future generations of CMOS technology due to the lack of performance increase with scaling. Compressively strained Ge-rich alloys with high hole mobilities can also be grown on relaxed SiGe. We review progress in strained Si and dual channel heterostructures, and also introduce high hole mobility digital allo...
متن کاملHigh Mobility Strained Si/SiGe Heterostructure MOSFETs
Strained Siand SiGe-based heterostructure MOSFETs grown on relaxed SiGe virtual substrates exhibit dramatic electron and hole mobility enhancements over bulk Si, making them promising candidates for next generation CMOS devices. The most heavily investigated heterostructures consist of a single strained Si layer grown upon a relaxed SiGe substrate. While this configuration offers significant pe...
متن کاملFabrication and Analysis of Deep Submicron Strained - Si N - MOSFET ’ s
Deep submicron strained-Si n-MOSFET’s were fabricated on strained Si/relaxed Si0 8Ge0 2 heterostructures. Epitaxial layer structures were designed to yield well-matched channel doping profiles after processing, allowing comparison of strained and unstrained Si surface channel devices. In spite of the high substrate doping and high vertical fields, the MOSFET mobility of the strained-Si devices ...
متن کاملInvestigation of the electron transport and electrostatics of nanoscale strained Si/Si/Ge heterostructure MOSFETs
This thesis presents work aimed at investigating the possible benefit of strained-Si/SiGe heterostructure MOSFETs designed for nanoscale (sub-50-nm) gate lengths with the aid of device fabrication and electrical measurements combined with computer simulation. MOSFET devices fabricated on bulk-Si material are scaled in order to achieve gains in performance and integration. However, as device dim...
متن کاملStrained-Si on Si Ge MOSFET Inversion Layer Centroid Modeling
An accurate model for the inversion charge centroid of strained-Si on Si Ge metal-oxide semiconductor field effect transistors (MOSFETs) has been developed including the dependencies on the germanium mole fraction, the doping concentration, and the width of the strained-Si layer. We have also obtained a good estimation of the inversion charge. The inclusion of quantum effects in classical simul...
متن کامل